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IXFH 14N80
IXFH 15N80
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min.
Typ.
Max.
TO-247 AD Outline
g fs
V DS = 10 V; I D = 0.5 I D25 , pulse test
8
14
S
C iss
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
3965
315
4870
395
pF
pF
1
2
3
C rss
t d(on)
73
20
120
50
pF
ns
t r
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
33
50
ns
t d(off)
R G = 2 ? (External)
63
100
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
t f
32
50
ns
Dim.
Millimeter
Inches
Q g(on)
150 200
nC
Min. Max.
A 4.7 5.3
Min. Max.
.185 .209
A 1
A 2
Q gs
Q gd
R thJC
R thCK
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
23
64
0.25
45
68
0.42
nC
nC
K/W
K/W
2.2 2.54
2.2 2.6
b 1.0 1.4
b 1
1.65 2.13
b 2
2.87 3.12
C .4 .8
D 20.80 21.46
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
.610 .640
0.205 0.225
.780 .800
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
.177
.140 .144
0.232 0.252
.170 .216
I S
V GS = 0 V
14N80
14
A
S 6.15 BSC
242 BSC
15N80
15
A
I SM
Repetitive;
14N80
15N80
56
60
A
A
V SD
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
1.5
V
t rr
Q RM
I RM
I F = I S
-di/dt = 100 A/ μ s,
V R = 100 V
T J = 25 ° C
T J = 125 ° C
1
8.5
250
400
ns
ns
μ C
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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